关 键 词：BZN；PLD；非晶态；
ABSTRACT
Bi2O3-ZnO-Nb2O5 (BZN) pyrochlore ceramics have been developed for low firing temperature capacitor and microwave dielectric device, because they posses a middle dielectric constant, low dielectric loss. In recent years large dielectric tunability of the BZN films was found and reported, which suggested that BZN had potential application for integrated microwave components. The investagation of BZN system, especially BZN films, has been drawing attention to the researchers from academic and industrials.
In this paper, amorphous BZN thin films were successfully prepared by pulsed laser deposition (PLD) on the Pt electrode coated Si substrates. The oxygen pressure and annealing temperature of the Bi1.5ZnNb1.5O7 films were investigated. Different oxygen pressure and different annealing temperature were experimented to show how they influence the dielectric properties and film structures. BZN thin films were all amorphous phase below 200 ℃ from the SEM and XRD results. With the increase of oxygen pressure, the thickness of Bi1.5ZnNb1.5O7 films increase accordingly, the morphology of BZN films surface becomes rougher and the less compact. Dielectric constant show that films annealed at 150℃ own the best dielectric property. Bi1.5ZnNb1.5O7 Films deposited at 1 Pa, annealed at 150℃ has the dielectric constant of 60.1, loss tangent of 0.0083 at the frequency of 10kHz, leakage current density of the Bi1.5ZnNb1.5O7 film is about 1×10-7A/cm2 at DC bias electrical field 0.3MV/cm.
KEY WORDS: BZN; PLD; Amorphous phase; Dielectric
关 键 词：BZN；PLD；非晶态；
ABSTRACT
Bi2O3-ZnO-Nb2O5 (BZN) pyrochlore ceramics have been developed for low firing temperature capacitor and microwave dielectric device, because they posses a middle dielectric constant, low dielectric loss. In recent years large dielectric tunability of the BZN films was found and reported, which suggested that BZN had potential application for integrated microwave components. The investagation of BZN system, especially BZN films, has been drawing attention to the researchers from academic and industrials.
In this paper, amorphous BZN thin films were successfully prepared by pulsed laser deposition (PLD) on the Pt electrode coated Si substrates. The oxygen pressure and annealing temperature of the Bi1.5ZnNb1.5O7 films were investigated. Different oxygen pressure and different annealing temperature were experimented to show how they influence the dielectric properties and film structures. BZN thin films were all amorphous phase below 200 ℃ from the SEM and XRD results. With the increase of oxygen pressure, the thickness of Bi1.5ZnNb1.5O7 films increase accordingly, the morphology of BZN films surface becomes rougher and the less compact. Dielectric constant show that films annealed at 150℃ own the best dielectric property. Bi1.5ZnNb1.5O7 Films deposited at 1 Pa, annealed at 150℃ has the dielectric constant of 60.1, loss tangent of 0.0083 at the frequency of 10kHz, leakage current density of the Bi1.5ZnNb1.5O7 film is about 1×10-7A/cm2 at DC bias electrical field 0.3MV/cm.
KEY WORDS: BZN; PLD; Amorphous phase; Dielectric
